Effect of both deposition temperature and indium doping on the properties of sol-gel dip-coated SnO2 films.
Identifieur interne : 000E76 ( Main/Exploration ); précédent : 000E75; suivant : 000E77Effect of both deposition temperature and indium doping on the properties of sol-gel dip-coated SnO2 films.
Auteurs : RBID : pubmed:22935595English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Tin Compounds.
- Crystallization, Microscopy, Electron, Scanning, Optical Phenomena, Phase Transition, Photons, Spectrometry, X-Ray Emission, Temperature, X-Ray Diffraction.
Abstract
Using indium chloride as an In source, In-doped SnO(2) films were fabricated by sol-gel method through dip-coating on borofloat glass substrates. The undoped SnO(2) films were deposited in air between 400 and 600 °C to get optimum deposition temperature in terms of crystal quality and hence In-doped SnO(2) films were deposited in air at 600 °C. The effect of both deposition temperature and In content on structural, morphological, optical and electrical properties was investigated. The crystalline structure and orientation of the films were investigated by X-ray diffraction (XRD) and surface morphology was studied by a field emission scanning electron microscope (FESEM). The compositional analysis of the films was confirmed by energy dispersive X-ray spectrometer (EDS). The absorption band edge of the SnO(2) films shifted from 3.88 to 3.66 eV with In content. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance was affected significantly by deposition temperature and In content.
DOI: 10.1016/j.saa.2012.07.108
PubMed: 22935595
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Effect of both deposition temperature and indium doping on the properties of sol-gel dip-coated SnO2 films.</title><author><name sortKey="Caglar, Mujdat" uniqKey="Caglar M">Mujdat Caglar</name><affiliation wicri:level="1"><nlm:affiliation>Anadolu University, Faculty of Science, Department of Physics, 26470 Eskisehir, Turkey. mcaglar@anadolu.edu.tr</nlm:affiliation><country xml:lang="fr">Turquie</country><wicri:regionArea>Anadolu University, Faculty of Science, Department of Physics, 26470 Eskisehir</wicri:regionArea></affiliation></author><author><name sortKey="Atar, Kadir Cemil" uniqKey="Atar K">Kadir Cemil Atar</name></author></titleStmt><publicationStmt><date when="2012">2012</date><idno type="doi">10.1016/j.saa.2012.07.108</idno><idno type="RBID">pubmed:22935595</idno><idno type="pmid">22935595</idno><idno type="wicri:Area/Main/Corpus">000A96</idno><idno type="wicri:Area/Main/Curation">000A96</idno><idno type="wicri:Area/Main/Exploration">000E76</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystallization</term><term>Indium (chemistry)</term><term>Microscopy, Electron, Scanning</term><term>Optical Phenomena</term><term>Phase Transition</term><term>Photons</term><term>Spectrometry, X-Ray Emission</term><term>Temperature</term><term>Tin Compounds (chemistry)</term><term>X-Ray Diffraction</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Indium</term><term>Tin Compounds</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Crystallization</term><term>Microscopy, Electron, Scanning</term><term>Optical Phenomena</term><term>Phase Transition</term><term>Photons</term><term>Spectrometry, X-Ray Emission</term><term>Temperature</term><term>X-Ray Diffraction</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using indium chloride as an In source, In-doped SnO(2) films were fabricated by sol-gel method through dip-coating on borofloat glass substrates. The undoped SnO(2) films were deposited in air between 400 and 600 °C to get optimum deposition temperature in terms of crystal quality and hence In-doped SnO(2) films were deposited in air at 600 °C. The effect of both deposition temperature and In content on structural, morphological, optical and electrical properties was investigated. The crystalline structure and orientation of the films were investigated by X-ray diffraction (XRD) and surface morphology was studied by a field emission scanning electron microscope (FESEM). The compositional analysis of the films was confirmed by energy dispersive X-ray spectrometer (EDS). The absorption band edge of the SnO(2) films shifted from 3.88 to 3.66 eV with In content. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance was affected significantly by deposition temperature and In content.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22935595</PMID><DateCreated><Year>2012</Year><Month>09</Month><Day>24</Day></DateCreated><DateCompleted><Year>2013</Year><Month>04</Month><Day>18</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1873-3557</ISSN><JournalIssue CitedMedium="Internet"><Volume>96</Volume><PubDate><Year>2012</Year><Month>Oct</Month></PubDate></JournalIssue><Title>Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy</Title><ISOAbbreviation>Spectrochim Acta A Mol Biomol Spectrosc</ISOAbbreviation></Journal><ArticleTitle>Effect of both deposition temperature and indium doping on the properties of sol-gel dip-coated SnO2 films.</ArticleTitle><Pagination><MedlinePgn>882-8</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1016/j.saa.2012.07.108</ELocationID><ELocationID EIdType="pii" ValidYN="Y">S1386-1425(12)00729-9</ELocationID><Abstract><AbstractText>Using indium chloride as an In source, In-doped SnO(2) films were fabricated by sol-gel method through dip-coating on borofloat glass substrates. The undoped SnO(2) films were deposited in air between 400 and 600 °C to get optimum deposition temperature in terms of crystal quality and hence In-doped SnO(2) films were deposited in air at 600 °C. The effect of both deposition temperature and In content on structural, morphological, optical and electrical properties was investigated. The crystalline structure and orientation of the films were investigated by X-ray diffraction (XRD) and surface morphology was studied by a field emission scanning electron microscope (FESEM). The compositional analysis of the films was confirmed by energy dispersive X-ray spectrometer (EDS). The absorption band edge of the SnO(2) films shifted from 3.88 to 3.66 eV with In content. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance was affected significantly by deposition temperature and In content.</AbstractText><CopyrightInformation>Copyright © 2012 Elsevier B.V. All rights reserved.</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Caglar</LastName><ForeName>Mujdat</ForeName><Initials>M</Initials><Affiliation>Anadolu University, Faculty of Science, Department of Physics, 26470 Eskisehir, Turkey. mcaglar@anadolu.edu.tr</Affiliation></Author><Author ValidYN="Y"><LastName>Atar</LastName><ForeName>Kadir Cemil</ForeName><Initials>KC</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2012</Year><Month>08</Month><Day>04</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Spectrochim Acta A Mol Biomol Spectrosc</MedlineTA><NlmUniqueID>9602533</NlmUniqueID><ISSNLinking>1386-1425</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Tin Compounds</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>18282-10-5</RegistryNumber><NameOfSubstance>stannic oxide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Crystallization</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Microscopy, Electron, Scanning</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Optical Phenomena</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Phase Transition</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Photons</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Spectrometry, X-Ray Emission</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Temperature</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Tin Compounds</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">X-Ray Diffraction</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="received"><Year>2012</Year><Month>4</Month><Day>30</Day></PubMedPubDate><PubMedPubDate PubStatus="revised"><Year>2012</Year><Month>7</Month><Day>21</Day></PubMedPubDate><PubMedPubDate PubStatus="accepted"><Year>2012</Year><Month>7</Month><Day>26</Day></PubMedPubDate><PubMedPubDate PubStatus="aheadofprint"><Year>2012</Year><Month>8</Month><Day>4</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2012</Year><Month>9</Month><Day>1</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2012</Year><Month>9</Month><Day>1</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2013</Year><Month>4</Month><Day>20</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">S1386-1425(12)00729-9</ArticleId><ArticleId IdType="doi">10.1016/j.saa.2012.07.108</ArticleId><ArticleId IdType="pubmed">22935595</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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